论文标题
$ al_2o_3的影响$钝化对垂直$ WSE_2 $ SCHOTTKY交界太阳能电池的光伏性能
Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells
论文作者
论文摘要
由于其在可见的波长范围内的宽带隙范围，高吸收系数以及与任意基板以及常规半导体技术的整合性，过渡金属二甲藻（TMD）材料已成为薄膜太阳能电池的有希望的候选物。然而，报告的基于TMD的太阳能电池的外部量子效率相对较低（EQE）和由于未比较的设计和设备制造而导致的较低的开路电压。本文研究了$ pt/wse_2 $垂直的Schottky连接太阳能电池，具有各种$ WSE_2 $厚度，以找到最佳的吸收剂厚度。此外，我们还表明，可以通过$ al_2o_3 $ passivation提高光伏性能，从而在410 nm110 nm ectenth Impertempent Impertement Inderepts inde nm evavel Inderplength Indereptivation均可提高EQE。总体产生的短路电流通过抗反射涂层，表面掺杂和表面陷阱钝化效应改善。多亏了$ {al_2o_3} $涂层，这项工作演示了一个380 mV的开路电压（$ v_ {oc} $）和短路电流密度（$ j_ {sc} $）的设备，为10.7 $ ma/cm/cm^2 $。最后，调查了这些设备中降低的开路电压降低的来源
Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high absorption coefficient and ease of integration with both arbitrary substrates as well as conventional semiconductor technologies. However, reported TMD-based solar cells suffer from relatively low external quantum efficiencies (EQE) and low open circuit voltage due to unoptimized design and device fabrication. This paper studies $Pt/WSe_2$ vertical Schottky junction solar cells with various $WSe_2$ thicknesses in order to find the optimum absorber thickness.Also, we show that the photovoltaic performance can be improved via $Al_2O_3$ passivation which increases the EQE by up to 29.5% at 410 nm wavelength incident light. The overall resulting short circuit current improves through antireflection coating, surface doping, and surface trap passivation effects. Thanks to the ${Al_2O_3}$ coating, this work demonstrates a device with open circuit voltage ($V_{OC}$) of 380 mV and short circuit current density ($J_{SC}$) of 10.7 $mA/cm^2$. Finally, the impact of Schottky barrier height inhomogeneity at the $Pt/WSe_2$ contact is investigated as a source of open circuit voltage lowering in these devices
