论文标题
复合半导体纳米线中的近场腔光学耦合
Near-field cavity optomechanical coupling in a compound semiconductor nanowire
论文作者
论文摘要
III-V复合半导体纳米线是一种具有新型混合量子界面的有吸引力的材料,该材料通过嵌入其自由构造结构中的波长可触发量子结构将光子,电子和声子互连。但是,在这种纳米力学元素中,一个挑战是如何通过其微小的机械运动来检测和操纵少量的声子。一种解决方案是通过引入``腔光学机械''框架将光腔与纳米线相结合,但是它们之间的典型尺寸差异成为实现此目标的障碍。在这里,我们证明了二氧化硅微球腔的近场耦合以及外延生长的INP/INAS独立式纳米线。淡淡的光力耦合不仅可以通过平衡的同伴干涉法对机械运动进行精细探测,还可以调整纳米线中的谐振频率,线宽,duff非线性和振动轴。将这种空腔光学力学与外延纳米线工程相结合为新颖的量子计量和信息处理开辟了道路。
A III-V compound semiconductor nanowire is an attractive material for a novel hybrid quantum interface that interconnects photons, electrons, and phonons through a wavelength-tunable quantum structure embedded in its free-standing structure. In such a nanomechanical element, however, a challenge is how to detect and manipulate a small number of phonons via its tiny mechanical motion. A solution would be to couple an optical cavity to a nanowire by introducing the ``cavity optomechanics'' framework, but the typical size difference between them becomes a barrier to achieving this. Here, we demonstrate near-field coupling of a silica microsphere cavity and an epitaxially grown InP/InAs free-standing nanowire. The evanescent optomechanical coupling enables not only fine probing of the mechanical motion by balanced homodyne interferometry but also tuning of the resonance frequency, linewidth, Duffing nonlinearity, and vibration axis in the nanowire. Combining this cavity optomechanics with epitaxial nanowire engineering opens the way to novel quantum metrology and information processing.