论文标题
可视化可调节的WO3/p-gan异质结
Visualizing an adjustable WO3/p-GaN heterojunction
论文作者
论文摘要
基于典型的半导体的P-N连接是现代电子设备和芯片行业的基本单元。虽然这些P-N连接的矫正属性通常是在制造单元后固定的。在这里，我们提出了具有可控电子性能的可调节的N-WO3/p-gan异质结。对于制备的N-WO3/P-GAN异质结，它几乎是透明的，并且显示了典型的P-N结元。如果通过宽松的电子 - 普罗顿协同途径逐渐将一些氢原子掺入WO3层中，则可以通过典型的P-N结（N-Wo3/p-GAN）动态转变为杂结（HXWO3/P-GAN）。更重要的是，由于WO3层的明显电致色谱特征，可以通过视力直接观察到这种进化。通过连接两个HXWO3/p-gan杂音，可以实现可控制的双功能矫正。此外，仅通过在环境下退火，HXWO3/p-gan异质结就可以恢复到原始的P-N Jucntion，这表明异质结是可控制的和可重复使用的。当前的研究将来将为动态电子设备提供巨大的机会。
The p-n junctions based on typical semiconductors are the elementary units for the modern electronic devices and chip industry. While the rectification property of those p-n junction is usually fixed once the unit is fabricated. Here, we proposed an adjustable n-WO3/p-GaN heterojunction with controllable electronic properties. For the prepared n-WO3/p-GaN heterojunction, it is almost transparent and shows typical p-n junction rectification. While if gradually doping some hydrogen atoms into WO3 layer by a facile electron-proton synergistic route, the heterojunction can be turned dynamically from the typical p-n junction (n-WO3/p-GaN) to standard Schottky contact (HxWO3/p-GaN) step by step. More importantly, this evolution can be directly visualized by eyesight due to the pronounced electrochromic characteristic of WO3 layer. By connecting two HxWO3/p-GaN heterojunctions, the controllable bi-functional rectification can be achieved. In addition, the HxWO3/p-GaN heterojunction can recovered to the original p-n jucntion just by annealing at ambient, demonstrating the heterojunction is controllable and reusable. The current study will open up tremendous opportunities for dynamic electronic devices in the future.
