论文标题

压力诱导的超导率在分层过渡金属葡萄糖核化合物(Zr,hf)gete $ _ {4} $通过数据驱动方法探索的

Pressure-Induced Superconductivity in Layered Transition-metal Chalcogenides (Zr,Hf)GeTe$_{4}$ Explored by Data-driven Approach

论文作者

Matsumoto, Ryo, Hou, Zhufeng, Adachi, Shintaro, Yamamoto, Sayaka, Tanaka, Hiromi, Takeya, Hiroyuki, Irifune, Tetsuo, Terakura, Kiyoyuki, Takano, Yoshihiko

论文摘要

分层的过渡金属硫化岩(ZR,HF)Gete $ _ {4} $从Atomwork数据库中筛选为由于其狭窄的带隙和在FERMI水平附近的高密度,作为压力诱导的超导性的候选。 (Zr,hf)Gete $ _ {4} $样品分别通过能量分散光谱法,单晶体X射线衍射和X射线光电源光谱,然后通过单晶,晶体结构和价状态合成。首次通过使用带有硼掺杂的钻石电极和未凝结的钻石绝缘层的钻石砧细胞,首次报道了两个晶体中压力诱导的超导性。 Zrgete $ _ {4} $和Hfgete $ _ {4} $的最大超导过渡温度分别为6.5 K,在57 GPA下和60 GPA下的6.6 K下为6.6 K。

Layered transition-metal chalcogenides (Zr,Hf)GeTe$_{4}$ were screened out from database of Atomwork as a candidate for pressure-induced superconductivity due to their narrow band gap and high density of state near the Fermi level. The (Zr,Hf)GeTe$_{4}$ samples were synthesized in single crystal and then the compositional ratio, crystal structures, and valence states were investigated via energy dispersive spectrometry, single crystal X-ray diffraction, and X-ray photoelectron spectroscopy, respectively. The pressure-induced superconductivity in both crystals were first time reported by using a diamond anvil cell with a boron-doped diamond electrode and an undoped diamond insulating layer. The maximum superconducting transition temperatures of ZrGeTe$_{4}$ and HfGeTe$_{4}$ were 6.5 K under 57 GPa and 6.6 K under 60 GPa, respectively.

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