论文标题
$α$ -in $ _2 $ SE SE $ _3 $基于非挥发性记忆
$α$-In$_2$Se$_3$ based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories
论文作者
论文摘要
在这项工作中，我们从理论和实验上研究了2d $α$ -in $ _2 $ _2 $ se $ _3 $的工作原理和非挥发性内存（NVM）功能，基于基于铁电 - 造成的铁------------$ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3。首先，我们通过实验表征和第一原则模拟分析了$α$ -in $ _2 $ se $ _3 $ van-der-waals（vdw）堆栈的半导体和铁电特性。然后，我们通过自我一致地求解Landau-Ginzburg-Devonshire（LGD）方程，Poisson的方程和电荷传输方程来开发FESMJ设备仿真框架。基于提取的FES参数，我们的仿真结果与我们制造的$α$ -in $ _2 $ _2 $ SE $ _3 $ _3 $ fesmj的实验特征显示出很好的一致性。我们的分析表明，金属和FES之间的VDW差距起着提供FES极化依赖于Schottky屏障高度的调制的关键作用。此外，我们表明FES的厚度缩放导致读/写电压的降低和区分性的增加。 FESMJ NVM的阵列级分析表明，相对于FE绝缘体隧道连接点（FTJ），意义余量增加了5.47倍，面积下降18.18倍，较低的读取功率。
In this work, we theoretically and experimentally investigate the working principle and non-volatile memory (NVM) functionality of 2D $α$-In$_2$Se$_3$ based ferroelectric-semiconductor-metal-junction (FeSMJ). First, we analyze the semiconducting and ferroelectric properties of $α$-In$_2$Se$_3$ van-der-Waals (vdW) stack via experimental characterization and first-principle simulations. Then, we develop a FeSMJ device simulation framework by self-consistently solving Landau-Ginzburg-Devonshire (LGD) equation, Poisson's equation, and charge-transport equations. Based on the extracted FeS parameters, our simulation results show good agreement with the experimental characteristics of our fabricated $α$-In$_2$Se$_3$ based FeSMJ. Our analysis suggests that the vdW gap between the metal and FeS plays a key role to provide FeS polarization-dependent modulation of Schottky barrier heights. Further, we show that the thickness scaling of FeS leads to a reduction in read/write voltage and an increase in distinguishability. Array-level analysis of FeSMJ NVM suggests a 5.47x increase in sense margin, 18.18x reduction in area and lower read-write power with respect to Fe insulator tunnel junction (FTJ).
