论文标题
N型GAN中氢扩散的证据
Evidence of hydrogen diffusion in n-type GaN
论文作者
论文摘要
对氢和氧气等杂质的控制在基于氮化物的半导体中至关重要，因为它们在光电子和高功率/高频电子电子中的适用性无与伦比。因此，希望继续研究其在半导体材料中的扩散和隔离。在这项工作中，我们报告了氮化层氢晶体的第一个观察结果。氢扩散的程度是通过次级离子质谱法确定的。使用氨热方法分析GAN在GAN中的特征性氢谱分析，导致在1045C温度下确定氢扩散系数 - HVPE的标准生长温度（卤化物蒸气相外交）方法。
The control over impurities like hydrogen and oxygen is of key importance in nitride-based semiconducting due to their unrivaled applicability in optoelectronics and high power/high frequency electronics. Therefore, it is desirable to continue the research on its diffusion and segregation in semiconductor materials. In this work, we report on a first observation on hydrogen outdiffusion from bulk crystalline gallium nitride. The extent of the hydrogen diffusion is established by secondary ion mass spectrometry. Analysis of characteristic hydrogen profile in GaN grown using ammonothermal method, led to the determination of the hydrogen diffusion coefficient at the temperature of 1045C - a standard growth temperature for HVPE (halide vapor phase epitaxy) method.
