论文标题
基于分析物理学的纳米层和纳米线FET中电子通道密度的建模
Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire FETs
论文作者
论文摘要
我们提出了一种基于物理学的方法，用于对场效应晶体管中通道电荷密度的准确分析计算作为外栅极偏置的功能。这种方法基于对基本静电方程式作为电位和化学电位的平衡的一致考虑，这使我们能够以统一的方式获得纳米片（对称和不对称）和纳米线的明确分析表达式连续删除亚阈值和高于阈值的区域。始终引入和讨论两个在概念上对现象学阈值电压的定义。
We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biases. This approach is based on a consistent consideration of basic electrostatic equation as a balance of electric and chemical potentials which allows us to obtain in a unified way the explicit analytic expressions continuously de-scribing the subthreshold and above threshold regions in nanosheet (symmetric and asymmetric) and nanowire FETs. Two conceptually different definitions of phenomenological threshold voltage are consistently introduced and discussed.
