论文标题
互补逻辑的压电SPDT NEMS开关
Piezoelectric SPDT NEMS Switch for Complementary Logic
论文作者
论文摘要
持续的互补金属氧化物 - 氧化流极导器(CMOS)技术缩放的州泄漏和切换延迟已成为主要挑战。先前的工作提出了一个“远见”继电器结构,以模仿CMO的操作。本文提出了一种基于ALN压电悬臂梁的新型单孔双插曲(SPDT)开关结构,以改善前“远见”继电器结构。给出了几何参数,并已经计算了诸如致动电压,切换时间和接触力之类的密钥开关参数,并将其与以前的“锯齿”继电器结构进行了比较。还显示了分析和设计过程,并描述了微制作过程。
Off-state current leakage and switching delay has become the main challenge for continued complementary metal-oxide-semiconductor (CMOS) technology scaling. Previous work proposes a "see-saw" relay structure to mimic the operation of CMOS. This paper presents a novel single-pole double-throw (SPDT) switch structure based on AlN piezoelectric cantilever beam to improve the former "see-saw" relay structure. Geometry parameters are given and key switch parameters such as actuation voltage, switching time and contact force have been calculated and compared with previous "see-saw" relay structure. Analysis and design process is shown and micro-fabrication process is described as well.