论文标题
具有可调电子特性的黑磷产量的高产量和掺杂
High Yield Growth and Doping of Black Phosphorus with Tunable Electronic Properties
论文作者
论文摘要
黑色磷（BP）由于其独特的电子和光学特性，最近引起了巨大的兴趣。掺杂是调整A材料的电子结构的有效策略，但是，BP的直接和可控制的生长高产量，其掺杂仍然是一个巨大的挑战。在这里，我们报告了有效的短途运输（SDT）生长方法，并实现了迄今为止产量最高的高质量BP的受控增长，其中98％的红磷转化为BP。 SDT增长方法也实现了AS，SB，BI，SE和TE的BP掺杂。光谱结果表明，掺杂系统地改变其电子结构，包括带隙，工作函数和能带位置。结果，我们发现与原始BP相比，掺杂的BP样品（SB和TE掺杂BP）的空气稳定性改善，这是由于传导带的降档最小值，掺杂。这项工作开发了一种新的方法，可以通过可调电子结构和提高稳定性生长BP和掺杂的BP，并应扩大这些类别的材料在各个区域的用途。
Black phosphorus (BP) has recently attracted significant interest due to its unique electronic and optical properties. Doping is an effective strategy to tune a material's electronic structures, however, the direct and controllable growth of BP with a high yield and its doping remain a great challenge. Here we report an efficient short-distance transport (SDT) growth approach and achieve the controlled growth of high quality BP with the highest yield so far, where 98% of the red phosphorus is converted to BP. The doping of BP by As, Sb, Bi, Se and Te are also achieved by this SDT growth approach. Spectroscopic results show that doping systematically changes its electronic structures including band gap, work function, and energy band position. As a result, we have found that the air-stability of doped BP samples (Sb and Te-doped BP) improves compared with pristine BP, due to the downshift of the conduction band minimum with doping. This work develops a new method to grow BP and doped BP with tunable electronic structures and improved stability, and should extend the uses of these class of materials in various areas.
