论文标题
辐射损伤研究使用101.4 MEV质子的Sensl J系列硅光层面
Radiation Damage Study of SensL J-Series Silicon Photomultipliers Using 101.4 MeV Protons
论文作者
论文摘要
J系列硅光电层流（SIPM）的辐射损伤已在未来的太空传播闪烁探测器中使用这些光电探测器的背景下进行了研究。将几个SIPM样品暴露于101.4 MEV质子，其中1 MeV中子等效的通量范围从1.27*10^8 N/cm^2到1.23*10^10^10 n/cm^2。辐照后，SIPMS在黑暗电流和噪声方面经历了很大的增加，这可能会在功耗，热控制和检测低能事件方面对长期空间任务构成问题。用CEBR3闪烁体晶体进行的测量结果表明，暴露于1.23*10^10 n/cm^2和随后的室温退火后，在室温下，单个6 mm平方SIPM的暗噪声从0.1 keV升高到2 keV。由于SIPM噪声较大，使用16-SIPM阵列使用4-SIPM阵列和40 keV，使用4-SIPM阵列和40 keV增加了CEBR3检测器的γ射线检测阈值。仅观察到质子照射对平均检测器信号的影响很小，这表明SIPM增益和光子检测效率没有很小的变化。
Radiation damage of J-series silicon photomultipliers (SiPMs) has been studied in the context of using these photodetectors in future space-borne scintillation detectors. Several SiPM samples were exposed to 101.4 MeV protons, with 1 MeV neutron equivalent fluence ranging from 1.27*10^8 n/cm^2 to 1.23*10^10 n/cm^2 . After the irradiation, the SiPMs experienced a large increase in the dark current and noise, which may pose problems for long-running space missions in terms of power consumption, thermal control and detection of low-energy events. Measurements performed with a CeBr3 scintillator crystal showed that after exposure to 1.23*10^10 n/cm^2 and following room-temperature annealing, the dark noise of a single 6 mm square SiPM at room temperature increased from 0.1 keV to 2 keV. Because of the large SiPM noise, the gamma-ray detection threshold increased to approximately 20 keV for a CeBr3 detector using a 4-SiPM array and 40 keV for a detector using a 16-SiPM array. Only a small effect of the proton irradiation on the average detector signal was observed, suggesting no or little change to the SiPM gain and photon detection efficiency.
