论文标题

揭示单层半导体的光发射通道,该通道耦合到硅Nanoantennas

Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas

论文作者

Poumirol, Jean-Marie, Paradisanos, Ioannis, Shree, Shivangi, Agez, Gonzague, Marie, Xavier, Robert, Cedric, Mallet, Nicolas, Wiecha, Peter R., Larrieu, Guilhem, Larrey, Vincent, Fournel, Frank, Watanabe, Kenji, Taniguchi, Takashi, Cuche, Aurelien, Paillard, Vincent, Urbaszek, Bernhard

论文摘要

可以通过直接在宽带介电谐振器上干燥盖章来放置过渡金属二核苷(TMD)的单层(MLS),例如WSE2和MOSE2,它们具有提高室温下固态发射器的自发发射速率和亮度的能力。我们在室温光致发光映射实验中显示出强烈增强的发射和方向性修饰。通过不同的TMD材料(WSE2与Mose2)的不同,我们在具有各种设计(平面化与非平面化)的硅纳米装饰物上转移,我们在实验上分离了控制全球光发射增强的不同物理机制。对于WSE2和MOSE2,我们解决了单层中MIE共振和应变的影响。对于WSE2,重要的额外贡献来自平面外激子偶极子。这为室温应用的TMD-SI纳米装饰物结构的更具针对性的设计铺平了道路。

Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence mapping experiments. By varying TMD material (WSe2 versus MoSe2) transferred on silicon nanoresonators with various designs (planarized versus non-planarized), we experimentally separate the different physical mechanisms that govern the global light emission enhancement. For WSe2 and MoSe2 we address the effects of Mie Resonances and strain in the monolayer. For WSe2 an important additional contribution comes from out-of-plane exciton dipoles. This paves the way for more targeted designs of TMD-Si nanoresonator structures for room temperature applications.

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