论文标题
在低温下具有低黑噪声的新硅光电层状的表征
Characterization of New Silicon Photomultipliers with Low Dark Noise at Low Temperature
论文作者
论文摘要
硅光电塑料（SIPM）的放射性低，紧凑的几何形状，低操作电压和真空紫外线（VUV）的合理的光检测效率。因此，它具有替代光电倍增管（PMT）的潜力，以用于将来用液体氙（LXE）进行暗物质实验。然而，与LXE温度下的PMT相比，SIPM的深色计数率（DCR）近两个（$ \ sim $ 165 K）的数量级要高两个。这种类型的高DCR主要源自带对频段隧道效应产生的载体。为了抑制隧道效果，我们与Hamamatsu Photonics K. K.合作开发了一种新的SIPM，其电场强度降低，并在153 K至298 K的温度范围内表征了其性能。我们证明，与传统SIPMS相比，在低温下，新开发的SIPMS在低温下的DCR降低了6--54倍。
Silicon photomultipliers (SiPMs) have a low radioactivity, compact geometry, low operation voltage, and reasonable photo-detection efficiency for vacuum ultraviolet light (VUV). Therefore it has the potential to replace photomultiplier tubes (PMTs) for future dark matter experiments with liquid xenon (LXe). However, SiPMs have nearly two orders of magnitude higher dark count rate (DCR) compared to that of PMTs at the LXe temperature ($\sim$ 165 K). This type of high DCR mainly originates from the carriers that are generated by band-to-band tunneling effect. To suppress the tunneling effect, we have developed a new SiPM with lowered electric field strength in cooperation with Hamamatsu Photonics K. K. and characterized its performance in a temperature range of 153 K to 298 K. We demonstrated that the newly developed SiPMs had 6--54 times lower DCR at low temperatures compared to that of the conventional SiPMs.
