论文标题

通过相互作用障碍方法的回忆电路的阶段

Phases of memristive circuits via an interacting disorder approach

论文作者

Caravelli, Francesco, Sheldon, Forrest C.

论文摘要

我们使用新的Lyapunov函数来研究复制对称情况下的复员电路模型的相图。有效地,我们提出的模型是一种具有相互作用的淬火障碍的Ising模型,我们在控制参数中以一阶进行研究。尽管存在这些局限性,我们在参数空间中发现了一个复杂的相图和一个玻璃有限磁转变,该横向概述了较简单模型的早期平均场理论结果。我们的结果表明,渐近状态的渐近状态的非平凡景观。

We study the phase diagram of memristive circuit models in the replica-symmetric case using a novel Lyapunov function for the dynamics of these devices. Effectively, the model we propose is an Ising model with interacting quenched disorder, which we study at the first order in a control parameter. Notwithstanding these limitations, we find a complex phase diagram and a glass-ferromagnetic transition in the parameter space which generalizes earlier mean-field theory results for a simpler model. Our results suggest a non-trivial landscape of asymptotic states for memristive circuits.

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