论文标题
确定性单离子植入硅的置信度为99.87％的置信度
Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
论文作者
论文摘要
植入在同位素纯化的$^{28} $ si Crystal中的组V-Donor旋转的属性使它们对于大规模量子计算机设备而言是有吸引力的量子。重要功能包括$^{31} $ P的长核和电子旋转寿命，$^{209} $ bi的超精细时钟过渡和电气控制$^{123} $ sb核自旋。但是，可伸缩量子设备的体系结构需要能够制造单个供体原子的确定性阵列，并以足够的精确度放置以实现高保真量子操作。在这里，我们使用带电荷敏感电子设备的片上电极来证明单个低能（14 keV）P $^+$ $离子的植入，其前所未有的$ 99.87 \ pm0.02 $％的信心，同时在接近室温的同时运行。这允许与配备扫描探针离子孔径的原子力显微镜集成，以解决将植入离子引导到精确位置的关键问题。这些结果表明，确定性的单离子植入可能是制造用于量子计算和其他应用的大规模供体阵列的可行途径。
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices require the ability to fabricate deterministic arrays of individual donor atoms, placed with sufficient precision to enable high-fidelity quantum operations. Here we employ on-chip electrodes with charge-sensitive electronics to demonstrate the implantation of single low-energy (14 keV) P$^+$ ions with an unprecedented $99.87\pm0.02$% confidence, while operating close to room-temperature. This permits integration with an atomic force microscope equipped with a scanning-probe ion aperture to address the critical issue of directing the implanted ions to precise locations. These results show that deterministic single-ion implantation can be a viable pathway for manufacturing large-scale donor arrays for quantum computation and other applications.
