论文标题

座谈会:IV组单藻元单单层的物理特性

Colloquium: Physical properties of group-IV monochalcogenide monolayers

论文作者

Barraza-Lopez, Salvador, Fregoso, Benjamin M., Villanova, John W., Parkin, Stuart S. P., Chang, Kai

论文摘要

我们调查了铁电和铁弹性IV单一核生酶单层单层的最新知识。这些半导体具有显着的结构和机械性能,例如可切换内的自发极化,柔软的弹性常数,结构归化性以及热驱动的二维结构转换。此外,这些2D材料还显示了选择性山谷激发,山谷大厅效应和持续的自旋螺旋行为。在描述了他们的拉曼光谱之后,还提供了对它们缺乏中心对称性的光学特性的讨论 - 例如异常强的第二谐波强度,较大的散装光伏效应,照片编剧和可调激元的结合能 - 也提供了。这些材料中观察到的物理特性源于其内在和可切换的电动极化(相关),并且在此审查的物理行为可以用于非挥发性记忆,valleytronic,旋转和光电设备:这些2D Multiferroce and富含2D材料工具箱。

We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally-driven two-dimensional structural transformations. Additionally, these 2D materials also display selective valley excitations, valley Hall effects, and persistent spin helix behavior. After a description of their Raman spectra, a discussion of optical properties arising from their lack of centrosymmetry---such as an unusually strong second-harmonic intensity, large bulk photovoltaic effects, photostriction, and tunable exciton binding energies---is provided as well. The physical properties observed in these materials originate from (correlate with) their intrinsic and switchable electric polarization, and the physical behavior hereby reviewed could be of use in non-volatile memory, valleytronic, spintronic, and optoelectronic devices: these 2D multiferroics enrich and diversify the 2D materials toolbox.

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