论文标题
$ n $ N $掺杂的GE：低温磁倍率属性
Heavily $n$-doped Ge: low-temperature magnetoresistance properties
论文作者
论文摘要
我们在这里报告了一项关于金属非金属跃迁金属侧面磷光掺杂锗的磁化特性的实验和理论研究。由于多体效应，通过进行低温测量并在广义的Drude模型中解释了一个由磁磁性的负值形成的异常状态。它揭示了低温下磁化特性背后的一个关键机制，因此，它构成了其在基本物理和技术应用中引起极大兴趣的材料中操纵的途径
We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications
