论文标题
PBZRO3膜的抗fiferroelelectrics Chitching中的关键场各向异性
Critical field anisotropy in the antiferroelectric switching of PbZrO3 films
论文作者
论文摘要
由于抗佛罗独立的潜在用途和电气冷却，因此抗纤维电气最近引起了人们的兴趣。它们的主要独特特征是抗fiferroelectric Swisting，即通过电场诱导相过渡到极相的可能性。在这里，我们使用化学溶液沉积在不同的几何形状和方向上处理的薄膜研究模型抗纤维自由钙钛矿PBZRO3的开关行为。研究了平面外和平面内切换配置。观察到临界场高度取决于电场相对于膜质地的方向。我们表明，这种行为在质量上与相变向菱形极性相位。我们最终估计了结晶石方向和膜质地在文献中观察到的变化中的重要性。
Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e. the possibility to induce a phase transition to a polar phase by an electric field. Here we investigate the switching behavior of the model antiferroelectric perovskite PbZrO3 using thin films processed by chemical solution deposition in different geometries and orientations. Both out-of-plane and in-plane switching configurations are investigated. The critical field is observed to be highly dependent on the direction of the electric field with respect to the film texture. We show that this behaviour is qualitatively consistent with a phase transition to a rhombohedral polar phase. We finally estimate the importance of crystallite orientation and film texturation in the variations observed in the literature.
