论文标题
拓扑Kagome磁铁CO3SN2S2薄片，具有高电子迁移率和大型霍尔效应
Topological Kagome magnet Co3Sn2S2 thin flakes with high electron mobility and large anomalous Hall effect
论文作者
论文摘要
磁性Weyl半法子不仅吸引了其拓扑量子现象，而且吸引了新兴的材料类，以实现二维极限以实现量子异常效应。带有分层kagome晶格的Shandite化合物CO3SN2S2就是这样一种材料，在该材料中，竭尽全力用于合成二维晶体。在这里，我们报告了CO3SN2S2薄片的合成，其厚度为250 nm，通过化学蒸汽传输方法。我们发现，这种便捷的自下而上的方法允许形成大尺寸的高质量的薄片，在那里我们确定了磁性拓扑半图中最大的电子迁移率（〜2,600 cm2v-1s-1），以及大型异常霍尔电导率以及较大的异常霍尔电导率（〜1,400ω-1CM-1）和ber架（〜1,400ω-1cm-1）和bers cul cul cul and cun and cul and ber and and and and and and 32％〜32％。我们的研究提供了一个可行的平台，用于研究高质量的磁性Weyl半分化薄片，并刺激对二维极限中未开发的拓扑现象的进一步研究。
Magnetic Weyl semimetals attract considerable interest not only for their topological quantum phenomena but also as an emerging materials class for realizing quantum anomalous Hall effect in the two-dimensional limit. A shandite compound Co3Sn2S2 with layered Kagome-lattices is one such material, where vigorous efforts have been devoted to synthesize the two-dimensional crystal. Here we report a synthesis of Co3Sn2S2 thin flakes with a thickness of 250 nm by chemical vapor transport method. We find that this facile bottom-up approach allows the formation of large-sized Co3Sn2S2 thin flakes of high-quality, where we identify the largest electron mobility (~2,600 cm2V-1s-1) among magnetic topological semimetals, as well as the large anomalous Hall conductivity (~1,400 Ω-1cm-1) and anomalous Hall angle (~32 %) arising from the Berry curvature. Our study provides a viable platform for studying high-quality thin flakes of magnetic Weyl semimetal and stimulate further research on unexplored topological phenomena in the two-dimensional limit.
