论文标题

磁性逆转中的随机过程涉及磁记忆元件中的域壁运动

Stochastic processes in magnetization reversal involving domain wall motion in magnetic memory elements

论文作者

Bouquin, Paul, Kim, Joo-Von, Bultynck, Olivier, Rao, Siddharth, Couet, Sebastien, Kar, Gouri Sankar, Devolder, Thibaut

论文摘要

我们通过时间分辨的电导测量表明,通过磁力墙直径磁性磁力隧道连接中的域壁运动的磁化逆转为主导。第一个涉及与域壁成核有关的孵育时间,而第二个是由沃克式的随机运动产生的。微型磁性模拟揭示了磁盘中心附近壁的时间固定的几项贡献,包括Bloch点成核和壁进进。我们表明,当Bloch和Néel壁曲线在最佳尺寸磁盘中变成能量时,可以恢复可再现的弹道运动,从而实现准确定性运动。

We show experimentally through time-resolved conductance measurements that magnetization reversal through domain wall motion in sub-100 nm diameter magnetic tunnel junctions is dominated by two distinct stochastic effects. The first involves the incubation time related to domain wall nucleation, while the second results from stochastic motion in the Walker regime. Micromagnetics simulations reveal several contributions to temporal pinning of the wall near the disk center, including Bloch point nucleation and wall precession. We show that a reproducible ballistic motion is recovered when Bloch and Néel wall profiles become degenerate in energy in optimally sized disks, which enables quasi-deterministic motion.

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