论文标题
半法子的厅系数
Hall coefficient of semimetals
论文作者
论文摘要
Hall系数的最近开发的公式[A. Auerbach，物理。莱特牧师。 121，66601（2018）]应用于淋巴结线和Weyl半含量（包括石墨烯），并在两个和三个维度上应用于自旋轨道分裂半导体带。计算降低到两个平衡敏感性的比率，在弱混乱中，校正可以忽略不计。与Drude的反载体密度的偏差与带退化，费米表面拓扑结构和带间散射有关。提出了可以测量这些偏差的实验。
A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 66601 (2018)] is applied to nodal line and Weyl semimetals (including graphene), and to spin-orbit split semiconductor bands in two and three dimensions. The calculation reduces to a ratio of two equilibrium susceptibilities, where corrections are negligible at weak disorder. Deviations from Drude's inverse carrier density are associated with band degeneracies, Fermi surface topology, and interband scattering. Experiments which can measure these deviations are proposed.
