论文标题
单层过渡金属二分法中的栅极可调跨平面散热
Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides
论文作者
论文摘要
对底物的有效热量耗散对于纳米电子学的最佳装置性能至关重要。我们开发了一种电子热边界电导（TBC）的理论，该理论是由远程声子散射用于单层过渡金属二进制二核苷（TMD）半导体的MOS $ _ {2} $和WS $ _ {2} $，并用不同的电源tbc建模其电子TBC（$ _ $ _ $ _ $ _} $ _} 2} al $ _ {2} $ o $ _ {3} $）。我们的结果表明，电子TBC很大程度上取决于电子密度，这表明它可以通过磁场效应晶体管中的栅极电极调节，并且这种效果最为明显，而Al $ _ {2} $ o $ $ _ {3} $。我们的作品为设计具有栅极可调跨平面热功能的新型热设备设计铺平了道路。
Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer transition metal dichalcogenide (TMD) semiconductors MoS$_{2}$ and WS$_{2}$, and model their electronic TBC with different dielectric substrates (SiO$_{2}$, HfO$_{2}$ and Al$_{2}$O$_{3}$). Our results indicate that the electronic TBC is strongly dependent on the electron density, suggesting that it can be modulated by the gate electrode in field-effect transistors, and this effect is most pronounced with Al$_{2}$O$_{3}$. Our work paves the way for the design of novel thermal devices with gate-tunable cross-plane heat-dissipative properties.
