论文标题
通过挤出距离通过 - 硅质的统计和形态的音高距离的影响
The Effect of Pitch Distance on the Statistics and Morphology of Through-Silicon Via Extrusion
论文作者
论文摘要
在这项工作中，我们研究了音高距离对Cu TSV和基本机制挤出的统计变化和形态的影响。从具有两个不同音高距离的TSV样品中获得挤压统计。在vias中观察到挤出量的显着增加，螺距较小，但挤出扩散在很大程度上不受影响。表征和分类了挤压静脉的形态，并进行了有限元分析以研究音高距离对应力和变形的影响。结果表明，来自相邻vias的应力场重叠导致软子vias的应力较大，这随后导致了更高的挤压。在挤压远处观察到的形态与应力和微观结构的综合作用下不同变形机制的运行有关。在两组VIA中，VIA挤出的统计扩展与通过微观结构的随机性有关。通过使用TA的薄盖层抑制通过顶部表面处的空位源，在两个音高距离的VIA中，俯仰距离的不利效应被最小化，并明显减少了挤压。
In this work, we investigated the effect of pitch distance on the statistical variation and morphology of extrusion in Cu TSVs and the underlying mechanisms. Extrusion statistics were obtained from TSV samples with two different pitch distances. A notable increase in the magnitude of extrusion was observed in vias with smaller pitch, yet the extrusion spread was largely unaffected. The morphologies of the extruded vias were characterized and categorized, and finite element analysis was carried out to study the effect of pitch distance on stress and deformation. The results suggested that the overlapping of stress fields from neighboring vias resulted in larger stress in the small-pitch vias, which subsequently led to higher extrusion. The morphologies observed in the extruded vias were related to the operation of different deformation mechanisms under the combined effect of stress and microstructure. The statistical spread of via extrusion, which was similar in both groups of vias, was related to the stochastic nature of the via microstructure. By using a thin cap layer of Ta to suppress the vacancy sources at the via top surface, the adverse effect of the pitch distance was minimized and a pronounced reduction of extrusion was achieved in vias of both pitch distances.
