论文标题

通过脱位理论在2D物质薄片中的互联角选择规则

Selection rules of twistronic angles in 2D material flakes via dislocation theory

论文作者

Zhu, Shuze, Annevelink, Emil, Pochet, Pascal, Johnson, Harley T.

论文摘要

层间旋转角度伴侣与扭曲的范德华层的电子状态非常强。但是,并非每个角度在能量上都很有利。关于旋转可调电子设备的最新实验揭示了一组离散的角度,旋转可调电子设备采用最稳定的配置。然而,尚未在扭曲的双层系统中找到这些本质上首选的扭曲角度的定量图,这对扭曲电子设备的按需设计构成了挑战,这些扭曲电子设备在所需的扭曲角度本质上是稳定的。在这里,我们揭示了扭曲双层系统本质上首选的扭曲角度和几何形状之间的简单映射,以几何缩放定律的形式,对于仅在支撑层上旋转薄片的几何参数的函数,用于多种本质上优选的扭曲角度。我们揭示了这些针对三角形和六角形片的缩放定律,因为它们经常出现在化学蒸气沉积生长中。我们还提出了一种处理任意片状几何形状的通用方法。这种无尺寸的缩放法律具有各种二维材料双层系统的普遍性,为内在的“ Twistronics”的按需设计提供了丰富的机会。例如,可以揭示一组增加的魔法大小,即可以揭示出双层石墨烯系统中多个魔法角度的零伴随序列的魔术大小。

Interlayer rotation angle couples strongly to the electronic states of twisted van der Waals layers. However, not every angle is energetically favorable. Recent experiments on rotation-tunable electronics reveal the existence of a discrete set of angles at which the rotation-tunable electronics assume the most stable configurations. Nevertheless, a quantitative map for locating these intrinsically preferred twist angles in twisted bilayer system has not been available, posing challenges for the on-demand design of twisted electronics that are intrinsically stable at desired twist angles. Here we reveal a simple mapping between intrinsically preferred twist angles and geometry of the twisted bilayer system, in the form of geometric scaling laws for a wide range of intrinsically preferred twist angles as a function of only geometric parameters of the rotating flake on a supporting layer. We reveal these scaling laws for triangular and hexagonal flakes since they frequently appear in chemical vapor deposition growth. We also present a general method for handling arbitrary flake geometry. Such dimensionless scaling laws possess universality for all kinds of two-dimensional material bilayer systems, providing abundant opportunities for the on-demand design of intrinsic "twistronics". For example, the set of increasing magic-sizes that intrinsically prefers zero-approaching sequence of multiple magic-angles in bilayer graphene system can be revealed.

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