论文标题

二维铁磁铁电vof的预测$ _2 $单层

Prediction of two-dimensional ferromagnetic ferroelectric VOF$_2$ monolayer

论文作者

You, Hai-Peng, Ding, Ning, Chen, Jun, Dong, Shuai

论文摘要

如今,设计和搜索具有多个功能特征的材料是实现高性能电子设备的关键。在许多候选人中,二维多效材料具有巨大的潜力,可以应用于高度集成的磁电器设备,例如高密度的非挥发性记忆。在这里,我们预测二维材料VOF2单层具有内在的铁电和铁磁特性。 VOF $ _2 $单层拥有最大的vo $ $ x_2 $($ x $:halogen)oxyhalide的家族中最大的平板内铁电化($ 332 $ PC/m)。与其他VO $ x_2 $单层不同的磁接地状态是抗磁磁性或非共线性螺旋纹理的不同,VOF $ _2 $单层拥有强大的铁磁基态,这是罕见但非常可取的。我们的理论预测为进一步追求具有高性能磁性的更多二维多效材料提供了一个良好的候选和起点。

Nowadays, designing and searching for materials with multiple functional characteristics are the key to achieving high-performance electronic devices. Among many candidates, two-dimensional multiferroic materials have great potential to be applied in highly-integrated magnetoelectric devices, such as high-density non-volatile memories. Here, we predict a two-dimensional material VOF2 monolayer to possess intrinsic ferroelectric and ferromagnetic properties. The VOF$_2$ monolayer own the largest in-plane ferroelectric polarization ($332$ pC/m) in the family of VO$X_2$ ($X$: halogen) oxyhalides. Different from other VO$X_2$ monolayers whose magnetic ground states are antiferromagnetic or noncollinear spiral textures, the VOF$_2$ monolayer owns a robust ferromagnetic ground state, which is rare but highly desirable. Our theoretical prediction provides a good candidate and starting point for the further pursuit of more two-dimensional multiferroic materials with high-performance magnetoelectricity.

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