论文标题
锑沉积对GE/SI场发射电流密度的影响
Effects of Antimony Deposition on Field-Emission Current Density of Ge/Si
论文作者
论文摘要
为了估计锗/硅异质系统的田间发射电流密度，通过分子束外延生长20 nm ge/si（100）。一个样品的表面用一层锑覆盖，在测量样品之前，该锑在真空中被去除。在没有锑的情况下，将第二个GE/SI样品暴露于房间空气中。发现通过扫描隧道显微镜获得的两个样品的电流 - 电压特性都与经典的Fowler-Nordheim理论一致。 GE纳米晶体的发射电流密度超过了GE/Si润湿层的发射电流密度。纯GE纳米晶体的发射电流密度小于带有吸附层的GE纳米晶体发射电流的密度。
To estimate the field-emission current density of a germanium/silicon heterosystem, 20-nm Ge/Si(100) were grown by molecular beam epitaxy. The surface of one sample was covered with a layer of antimony, which was removed in vacuum prior to the samples being measured. A second sample of Ge/Si was exposed to room air in the absence of antimony. The current-voltage characteristics of both samples obtained by scanning tunneling microscopy were discovered to be in agreement with classical Fowler-Nordheim theory. The density of emission current from Ge nanocrystal exceeds the density of emission current from the wetting layer of Ge/Si. The density of emission current of pure Ge nanocrystal is less than the density of emission current of Ge nanocrystal with adsorption layers.
