论文标题
仪表诱导的浮雕拓扑状态在光子波导中
Gauge-induced Floquet topological states in photonic waveguides
论文作者
论文摘要
巨大的努力一直致力于寻找外来拓扑状态，这通常存在于根据宽边的拓扑之间的晶格之间的界面。在这里，我们展示了在整个结构上相同的拓扑顺序，但在两个径流浮子光子晶格之间的界面上定位的拓扑状态的新发现。胶质带结构揭示了这些新的接口模式属于floquetπ模式，得益于Floquet仪表的灵活控制，该模式进一步可以实现强大的单向传播。这些π接口模式的吸引人的传播在近红外波长的硅波导平台中得到了实验验证，这些平台表现出对结构波动的宽敞工作带宽和高耐受性。我们的方法为轻型操作提供了一条新的途径，并在Floquet Engineering及其他方面具有强大的行为。
Tremendous efforts have been devoted to the search for exotic topological states, which usually exist at an interface between lattices with differing topological invariants according to the bulk-edge correspondence. Here, we show a new finding of topological states localized at the interface between two gauge-shifted Floquet photonic lattices, despite the same topological order across the entire structure. The quasienergy band structures reveal that these new interface modes belong to the Floquet π modes, which are further found to enable a robust one-way propagation thanks to the flexible control of the Floquet gauge. The intriguing propagations of these π-interface modes are experimentally verified in a silicon waveguides platform at near-infrared wavelengths, which show both broad working bandwidth and high tolerance to the structural fluctuations. Our approach provides a new route for light manipulations with robust behaviours in Floquet engineering and beyond.
