论文标题

单步$ n $ -bit Toffoli Gate的高保真方法

A high-fidelity method for a single-step $N$-bit Toffoli gate in trapped ions

论文作者

Espinoza, Juan Diego Arias, Groenland, Koen, Mazzanti, Matteo, Schoutens, Kareljan, Gerritsma, Rene

论文摘要

有条件的多量门门是精细量子算法的关键组成部分。在最近的一项工作中,Rasmussen等人。 (Phys。Rev.A 101,022308)提出了一种有效的单步方法,用于原型多Quit Gate,Toffoli Gate,基于控制量子机之间的ISING相互作用和目标量子轴上适当的驱动场的组合。捕获的离子是实现此方法的自然平台,因为在越来越大的离子晶体中已经证明了由声子介导的相互作用。但是,这些相互作用的同时应用和栅极所需的驱动场导致Qubits和离子运动之间的不希望的纠缠,从而降低了门的保真度。在这项工作中,我们提出了一种基于这些声子介导的ISINIS相互作用的绝热切换的解决方案。我们研究了不完善的基态冷却的效果,并使用自旋回波技术来消除可实现的保真度中不需要的相位积累。对于与线性晶体的所有轴向模式结合的大门耦合,我们计算高保真度($> $> $ 99%)$ n $ qubit旋转,$ n = $ n = $ 3-7离子,冷却至其运动状态,而在1〜ms以下的栅极时间。对于大晶体,获得的高富度性也可以使闸门竞争竞争,以$ n $ qubit的Toffoli Gate的栅极组合,多步型变体,而牺牲了离子晶体的基态冷却。

Conditional multi-qubit gates are a key component for elaborate quantum algorithms. In a recent work, Rasmussen et al. (Phys. Rev. A 101, 022308) proposed an efficient single-step method for a prototypical multi-qubit gate, a Toffoli gate, based on a combination of Ising interactions between control qubits and an appropriate driving field on a target qubit. Trapped ions are a natural platform to implement this method, since Ising interactions mediated by phonons have been demonstrated in increasingly large ion crystals. However, the simultaneous application of these interactions and the driving field required for the gate results in undesired entanglement between the qubits and the motion of the ions, reducing the gate fidelity. In this work, we propose a solution based on adiabatic switching of these phonon mediated Ising interactions. We study the effects of imperfect ground state cooling, and use spin-echo techniques to undo unwanted phase accumulation in the achievable fidelities. For gates coupling to all axial modes of a linear crystal, we calculate high fidelities ($>$ 99%) $N$-qubit rotations with $N=$ 3-7 ions cooled to their ground state of motion and a gate time below 1~ms. The high fidelities obtained also for large crystals could make the gate competitive with gate-decomposed, multi-step variants of the $N$-qubit Toffoli gate, at the expense of requiring ground state cooling of the ion crystal.

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