论文标题
标准CMOS图像传感器中的转换增益增强
Conversion Gain Enhancement in Standard CMOS Image Sensors
论文作者
论文摘要
本文重点介绍了标准CMOS图像传感器（CIS）过程中实现固定照片二极管（PPD）和像素内电压跟随器的像素的转换增益（CG）。提出了CG表达的概述及其对CIS读数链噪声性能的影响。引入了涉及过程改进和纯电路设计和像素方案优化的CG增强技术。这些技术在180 nm CIS过程中的实施表明，相对于来自同一铸造厂的标准参考像素，CG的逐步增强超过了一个因子3，从而可以更好地理解在感觉节点电容和CG上的不同寄生元素。
This paper focuses on the conversion gain (CG) of pixels implementing pinned photo-diodes (PPD) and in-pixel voltage follower in standard CMOS image sensor (CIS) process. An overview of the CG expression and its impact on the noise performance of the CIS readout chain is presented. CG enhancement techniques involving process refinements and pure circuit design and pixel scheme optimization are introduced. The implementation of these techniques in a 180 nm CIS process demonstrates a progressive enhancement of the CG by more than a factor 3 with respect to a standard reference pixel from the same foundry, allowing a better understanding of the different parasitic elements on the sense node capacitance and CG.
