论文标题
fe/ge（111）接口状态的大rashba单向磁路
Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states
论文作者
论文摘要
在表面和界面处的结构反转不对称会产生Rashba自旋轨道相互作用（SOI），从而破坏了表面或界面状态的自旋变性。因此，当电流穿过表面或界面时，这种RASHBA效应会产生有效的磁场作用于电子自旋。这提供了一种在Si和Ge等材料中操纵自旋状态的附加工具，该材料以其批量形式具有反转对称性（或缺乏结构性内部不对称）。在不同金属和GE（111）之间的界面以及通过Fe/GE（111）界面的旋转荷利转换实验，即使由两个光元素制成，可以通过光发射光谱以及通过光发射转换实验来证明RASHBA状态的存在。在这项工作中，我们通过Magnetototransport测量值以高达0.1 \％的大型单向磁路线的形式鉴定出Fe/ge（111）界面在Fe/ge（111）界面上的指纹。从其温度依赖性来看，我们发现RashBA能量分裂大于纯GE（111）地下状态。
The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in materials such as Si and Ge that, in their bulk form, possess inversion symmetry (or lack structural inersion asymmetry). The existence of Rashba states could be demonstrated by photoemission spectroscopy at the interface between different metals and Ge(111) and by spin-charge conversion experiments at the Fe/Ge(111) interface even though made of two light elements. In this work, we identify the fingerprint of the Rashba states at the Fe/Ge(111) interface by magnetotransport measurements in the form of a large unidirectional magnetoresistance of up to 0.1 \%. From its temperature dependence, we find that the Rashba energy splitting is larger than in pure Ge(111) subsurface states.
