论文标题
INSB二维电子气体中的栅极定义的量子点接触
Gate-defined Quantum Point Contact in an InSb Two-dimensional Electron Gas
论文作者
论文摘要
我们研究了高动力INSB二维电子气体中静电定义的量子点接触。观察到定义明确的电导地位，并从有限偏置测量值中提取量子点接触的子带结构。 Zeeman分裂均在平面内和平面外磁场中测量。我们找到一个平面内G因子$ | g _ {\ Parallel}^* | \ $ 40。平面g因子被测量为$ | g _ {\ perp}^* | \ $ 50，接近批量的G因素。
We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor $|g_{\parallel}^* | \approx$ 40. The out-of-plane g factor is measured to be $|g_{\perp}^* | \approx$ 50, which is close to the g factor in the bulk.
