论文标题
半身拓扑半学候选者TBPTBI和Hoptbi中的异常大厅效应和负面纵向磁性
Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi
论文作者
论文摘要
由于其拓扑非平凡的电子结构，他的半身化合物引起了极大的关注，这导致了异常的电子传输特性。我们彻底研究了两个半手相的高质量单晶Tbptbi和Hoptbi的磁转移特性，以追求拓扑非平凡的电子状态的特征。两种研究的化合物的特征都有横向磁阻的巨大值，在磁场中没有饱和的迹象，高达14吨。Hoptbi用两个主频率证明了shubnikov-de haas效应，表明复杂的费米表面；载体有效质量的提取值很小，$ 0.18 \，m_e $和$ 0.27 \，m_e $。研究的化合物表现出负纵向磁磁性和异常霍尔效应，这可能是由非零浆果曲率引起的。两种化合物均表现出强烈的各向异性磁磁性，在霍普特比表现出类似蝴蝶的行为。
Half-Heusler compounds have attracted significant attention because of their topologically non-trivial electronic structure, which leads to unusual electron transport properties. We thoroughly investigated the magnetotransport properties of high-quality single crystals of two half-Heusler phases, TbPtBi and HoPtBi, in pursuit of the characteristic features of topologically non-trivial electronic states. Both studied compounds are characterized by the giant values of transverse magnetoresistance with no sign of saturation in magnetic field up to 14 T. HoPtBi demonstrates the Shubnikov-de Haas effect with two principal frequencies, indicating a complex Fermi surface; the extracted values of carrier effective masses are rather small, $0.18\,m_e$ and $0.27\,m_e$. The investigated compounds exhibit negative longitudinal magnetoresistance and anomalous Hall effect, which likely arise from a nonzero Berry curvature. Both compounds show strongly anisotropic magnetoresistance, that in HoPtBi exhibits a butterfly-like behavior.
