论文标题
半导体的反问题：模型和方法
Inverse problems for semiconductors: models and methods
论文作者
论文摘要
我们考虑从连接到电压电流图的不同模型获得的数据中识别半导体设备中不连续的掺杂曲线的问题。讨论了静止和瞬态设置，并建立了相应的反问题框架。所谓的固定单极和固定双极案例的数值实现显示了解决反问题的水平设置方法的有效性。
We consider the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by different models connected to the voltage-current map. Stationary as well as transient settings are discussed and a framework for the corresponding inverse problems is established. Numerical implementations for the so-called stationary unipolar and stationary bipolar cases show the effectiveness of a level set approach to tackle the inverse problem.
