论文标题
在闪光火花时，石墨蠕变在温度接近2000 $^\ circ $ c的温度下烧结
Graphite creep negation during flash spark plasma sintering under temperatures close to 2000$^\circ$C
论文作者
论文摘要
石墨蠕变对于使用高压（100 MPa）和接近2000 {\ textDegree} c的应用具有很高的重要性。特别是，当应用于超高温度材料（例如碳化硅）时，新的闪光火花等离子体烧结过程（FSP）对石墨蠕变非常敏感。在仅需几秒钟的闪光过程中，石墨工具的温度高于2000 {\ textDegree} c，导致其不可逆的变形。石墨工具蠕变可防止闪光火花等离子体烧结过程进一步发展。在这项研究中，有限元模型用于确定FSP工具温度。在这种情况下，我们探索了高于2000 {\ textdegree} C的温度和高压的石墨蠕变发作。知道石墨高温极限，我们修改了FSP的过程，以便在温度/压力的石墨蠕变范围之外发生烧结。使用优化的FSP，在大约30 s的情况下获得了95％密集的碳化硅契约。
Graphite creep has high importance for applications using high pressures (100 MPa) and temperatures close to 2000 {\textdegree}C. In particular, the new flash spark plasma sintering process (FSPS) is highly sensitive to graphite creep when applied to ultra-high temperature materials such as silicon carbide. In this flash process taking only a few seconds, the graphite tooling reaches temperatures higher than 2000 {\textdegree}C resulting in its irreversible deformation. The graphite tooling creep prevents the flash spark plasma sintering process from progressing further. In this study, a finite element model is used to determine FSPS tooling temperatures. In this context, we explore the graphite creep onset for temperatures above 2000 {\textdegree}C and for high pressures. Knowing the graphite high temperature limit, we modify the FSPS process so that the sintering occurs outside the graphite creep range of temperatures/pressures. 95 % dense silicon carbide compacts are obtained in about 30 s using the optimized FSPS.
