论文标题
电子密度对[001] GAAS量子井中自旋轨道相互作用的影响
Electron density effect on spin-orbit interaction in [001] GaAs quantum wells
论文作者
论文摘要
半导体量子孔中二维（2D）电子的自旋轨道相互作用通常被认为是由异质结构的带曲线确定的。在GAAS/ALGAAS类型异质系统中，这种相互作用由各向同性Bychkov-Rashba术语组成，该术语在对称井中不存在，而各向异性dresselhaus术语则反映了晶格对称性。众所周知，第一项可以由生长方向的电场控制：外部或内部，由2D电子的电荷密度引起。在这项工作中，我们揭示了2D电子电荷还可以显着影响对称量子井中的Dresselhaus相互作用。在含有量子井界面对dresselhaus术语的散装式的两种贡献的一频电子哈密顿量中，我们表明，来自2D电子电荷密度的内部电场可以实质上将Anisotropic Spin-Orbit型2D电子的相互作用重新拟纳。这种影响在量子井中自旋依赖性现象的定量研究中可能很重要。
The spin-orbit interaction of two-dimensional (2D) electrons in semiconductor quantum wells is usually considered to be determined by the band profile of a heterostructure. In the GaAs/AlGaAs type heterosystems, this interaction consists of the isotropic Bychkov-Rashba term, which is absent in symmetric wells, and the anisotropic Dresselhaus term, reflecting the lattice symmetry. It is well-known that the first term can be controlled by electric fields in the growth direction: external or internal, induced by a charge density of 2D electrons. In this work we reveal that the 2D electron charge can substantially affect also the Dresselhaus interaction in symmetric quantum wells. Within the one-band electron Hamiltonian containing, together with the bulk Dresselhaus interaction, the two contributions to the Dresselhaus term from the quantum well interfaces, we show that the internal electric field from the 2D electron charge density can substantially renormalize the anisotropic spin-orbit interaction of 2D electrons. This effect may be important in quantitative studies of spin-dependent phenomena in quantum wells.
