论文标题
X射线硅漂移检测器-CMOS前端系统，在室温下具有高能量分辨率
X-Ray Silicon Drift Detector-CMOS Front-End System with High Energy Resolution at Room Temperature
论文作者
论文摘要
我们提出了一个由硅漂移检测器（SDD）构成的光谱系统，该硅漂移检测器（SDD）耦合到CMOS电荷敏感的前置放大器（名为Sirio），该系统名为Sirio，专门设计用于达到最终的低噪声水平。 SDD的活性面积为13毫米，是通过优化生产过程来制造的，以减少阳极电流，从而在20 pa/cm/cm和20 pa/cm之间成功达到100 v/cm至500 v/cm的漂移场时的电流密度在20之间。前置放大器显示1.27和1.0电子R.M.S.的最小内在噪声水平。分别为20和30。在室温下（）5.9 KeV和脉冲线线分别具有136 eV和64 eV FWHM，对应于7.4电子R.M.S。的等效噪声电荷；噪声阈值在165 eV。在脉冲线上测量的能量分辨率范围从30c下降的82 eV FWHM（9.4电子R.M.S.）到30c的29 eV FWHM（3.3电子R.M.S.）。
We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13 mm , has been manufactured by optimizing the production processes in order to reduce the anode current, successfully reaching current densities between 17 pA/cm and 25 pA/cm at 20 for drift fields ranging from 100 V/cm to 500 V/cm. The preamplifier shows minimum intrinsic noise levels of 1.27 and 1.0 electrons r.m.s. at 20 and 30 , respectively. At room temperature ( ) the 5.9 keV and the pulser lines have 136 eV and 64 eV FWHM, respectively, corresponding to an equivalent noise charge of 7.4 electrons r.m.s.; the noise threshold is at 165 eV. The energy resolution, as measured on the pulser line, ranges from 82 eV FWHM (9.4 electrons r.m.s.) at 30C down to 29 eV FWHM (3.3 electrons r.m.s.) at 30C .
