论文标题
与墨西哥帽子带分散体的金属单钙化双层结构中的库仑拖拉
Coulomb drag in metal monochalcogenides double-layer structures with Mexican-hat band dispersions
论文作者
论文摘要
从理论上讲，我们使用Boltzmann传输理论形式主义研究了由两个平行的P型掺杂气体单层组成的系统的库仑阻力电阻率和等离子模式的行为。我们研究了温度，$ \ t $，载体密度，$ \ p $和层分离，$ \ d $对等离子模式的影响，并在无关的散射时间近似中拖动电阻率。我们的结果表明，血浆模式的密度依赖性可以通过$ \ p^{0.5} $近似。另外，计算建议分别为声学和光学等离子体能量的$ \ d^{0.2} $和$ \ d^{0.1} $依赖项。有趣的是，我们获得了双层金属单钙化物质中的阻力电阻率的行为，在具有抛物线分散剂的双量子井系统的行为与具有较大状态的载体密度的双量子井系统的行为与抛物线分散剂的行为。特别是，随着图层之间的距离增加，跨差值值呈指数降低。此外，在低（中级）温度下，阻力电阻率随$ \ t^{2}/p^{4} $（$ \ t^{2.8}/p^{4.5} $）而变化。最后，我们将阻力电阻率与气体的温度与其他墨西哥帽子材料（包括Gase和Inse）进行了比较，发现当金属一chalcogenide具有较小的墨西哥帽高度时，它会采用较高的值。
We theoretically study the Coulomb drag resistivity and plasmon modes behavior for a system composed of two parallel p-type doped GaS monolayers with Mexican-hat valence energy band using the Boltzmann transport theory formalism. We investigate the effect of temperature,$\ T$, carrier density,$\ p$, and layer separation,$\ d$, on the plasmon modes and drag resistivity within the energy-independent scattering time approximation. Our results show that the density dependence of plasmon modes can be approximated by$\ p^{0.5}$. Also, the calculations suggest a$\ d^{0.2}$ and a$\ d^{0.1}$ dependencies for the acoustic and optical plasmon energies, respectively. Interestingly, we obtain that the behavior of drag resistivity in the double-layer metal monochalcogenides swings between the behavior of a double-quantum well system with parabolic dispersion and that of a double-quantum wire structure with a large carrier density of states. In particular, the transresistivity value reduces exponentially with increasing the distance between layers. Furthermore, the drag resistivity changes as$\ T^{2}/p^{4}$ ($\ T^{2.8}/p^{4.5}$) at low (intermediate) temperatures. Finally, we compare the drag resistivity as a function of temperature for GaS with other Mexican-hat materials including GaSe and InSe and find that it adopts higher values when the metal monochalcogenide has smaller Mexican-hat height.
