论文标题
氮化合物障碍在氮化物半导体化合物中诱导的光电转运的定位作用的证据
Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
论文作者
论文摘要
在激活为负电子亲和力的P-GAN和P-GAN和P-GAN和P-GAN和P-GAN和P-GAN/GAN光（P-ingan/gan光）上，进行了接近伴随的光发射光谱实验。当温度降低时，INGAN样品的光发射量子产率下降了多个数量级，而在GAN样品上保持恒定。这表明我们将光电传输的冻结归因于我们将电子疾病引起的波动电势中的电子定位归因于电子定位。通过光发射光谱中峰值的低温下的消失证实了这种解释，这对应于在Ingan传导带底部放松的光电子的贡献。
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of magnitude when the temperature is decreased while it remains constant on the GaN sample. This indicates a freezing of photoelectron transport in p-InGaN that we attribute to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is confirmed by the disappearence at low temperature of the peak in the photoemission spectrum that corresponds to the contribution of the photoelectrons relaxed at the bottom of the InGaN conduction band.
