论文标题
在半导体量子点中纠缠自旋和自由度
Entangling spin and charge degrees of freedom in semiconductor quantum dots
论文作者
论文摘要
在这个理论手稿中，我提出了一种方案，用于将单个电子半导体自旋量子置量轴与三角形三量子点构型中的单个电子半导体电荷值纠缠在一起。三个量子点中有两个用于定义单个电子半导体电荷标尺。此外，自旋量子置换量被嵌入第三个量子点的Zeeman子级中。将单个量子门与纠缠的cnot门相结合，可以构建一个掉期门，因此可以将半导体旋转量子置乘以作为半导体电荷值的长寿命内存。
In this theoretical manuscript I propose a scheme for entangling a single electron semiconductor spin qubit with a single electron semiconductor charge qubit in a triangular triple quantum dot configuration. Two out of three quantum dots are used to define a single electron semiconductor charge qubit. Furthermore, the spin qubit is embedded in the Zeeman sub-levels of the third quantum dot. Combining single qubit gates with entangling CNOT gates allows one to construct a SWAP gate, and therefore to use the semiconductor spin qubit as a long-lived memory for the semiconductor charge qubit.
