论文标题
锗双量子井中的高驾驶孔双层
A high-mobility hole bilayer in a germanium double quantum well
论文作者
论文摘要
我们在紧张的锗双量子孔中设计，制造和研究一个孔双层。双重量子井型晶体管的磁转运表征是栅极电压的函数，显示了两个孔通道的人口，高组合的迁移率为3.34 $ \ times $ 10 $^5 $^5 $ cm $^2 $/vs且低易经密度2.38 $ \ times $ 10 $^$^$ 10 $^{10} $ CM $ CM $ cm cm $ cm^$ cm我们从Landau粉丝图的干扰模式中解决了渠道的个体人群。密度为2.0 $ \ times $ 10 $^{11} $ cm $^{ - 2} $，系统具有共鸣，我们观察到了前两个双层子带的反划分，其特征在于，其对称 - 抗敌人的差距为$ \ sim $ 0.69 $ 0.69 MEV，与Schrouroutions schrouster-schrouster-posiSsimentions相关。
We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0$\times$10$^{11}$ cm$^{-2}$ the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of $\sim$0.69 meV, in agreement with Schrödinger-Poisson simulations.
