论文标题
用于在石墨烯中构建定制量化阻力的算法$ p-n $连接
Algorithm for constructing customized quantized resistances in graphene $p-n$ junctions
论文作者
论文摘要
引入了一种算法，用于预测石墨烯P-N结中的量化电阻，这些电阻使用了电子流的单个输入和出口点。根据任意数量的端子的配置，电气测量结果在$ν= 2 $ plateau $ r_h \ r_h \ of12906Ω$上产生典型量化大厅电阻的分数倍数，并采用表格：$ \ frac {a} a} {a} {b} r_h $。这种理论公式与材料无关，并且在其他材料系统上的应用可以预期表现出量子霍尔行为。此外，从具有多个源和排水端子的基于石墨烯的设备的实验数据支持该公式。
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form: $\frac{a}{b}R_H$. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene-based devices with multiple source and drain terminals.
