论文标题
单层型单层元素元素中的平面内铁电和外侧隧道连接
Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides
论文作者
论文摘要
2D铁电材料有望设计低维内存设备。在这里，我们探索了IV组单钙化物MX（M = GE，SN; X = S，SE）的应变可调节的铁电特性及其在横向场隧道连接器件中的潜在应用。我们发现这些单层具有平面内铁电性，其铁电参数与其他已知的2D铁电材料相当。在SNSE，SNS，GESE和GES中，我们发现GES具有用于设备应用的最佳铁电参数，可以通过施加单轴拉伸应变来进一步改进。我们使用这些材料的计算出的铁电特性来研究基于侧向铁电隧道连接的4 nm设备的隧道电动（TER）。我们发现，根据这些材料，设备中的$ 10^3-10^5 $ $ 10^3-10^5 $，在施用拉伸应变时可以进一步提高40倍。
2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral field tunnel junction devices. We find that these monolayers have in-plane ferroelectricity, with their ferroelectric parameters being on par with other known 2D ferroelectric materials. Amongst SnSe, SnS, GeSe, and GeS, we find that GeS has the best ferroelectric parameters for device applications, which can be improved further by applying uniaxial tensile strain. We use the calculated ferroelectric properties of these materials to study the tunneling electroresistance (TER) of a 4 nm device based on lateral ferroelectric tunnel junction. We find a substantial TER ratio $10^3-10^5$ in the devices based on these materials, which can be further improved up to a factor of 40 on the application of tensile strain.
