论文标题

全面取向的胶体量子井的高方向,高效的解决方案加工发光二极管

Highly-directional, highly-efficient solution-processed light-emitting diodes of all-face-down oriented colloidal quantum wells

论文作者

Baruj, Hamed Dehghanpour, Yurdakul, Iklim, Canimkurbey, Betul, Isik, Ahmet Tarik, Shabani, Farzan, Delikanli, Savas, Shendre, Sushant, Erdem, Onur, Isik, Furkan, Demir, Hilmi Volkan

论文摘要

半导体胶体量子井(CQWS)由于其独特的特性,包括其高度各向异性的光学转变偶极偶极力矩(TDM),因此使纳米晶体的纳米晶体具有令人兴奋的准2D类纳米晶体。因此,在电致发光设备中,采用面向下向取向的CQW膜作为发射层(EML),预计将大大提高光子超过耦合效率。在这里,我们使用单个全面向底面的自我组装单层(SAM)CQWS的单个全面处理的胶体量子发光二极管(CQW-LEDS),可实现高水平的内置(IP)TDMS的高水平。该SAM膜将远程偶联的效率从22%(标准的随机发射器中的22%)提高到34%(面向下方的发射器)和电荷注入效率。这种由SAM-CQW领导的体系结构使溶液处理类型的CQW LED类型的高水平的外部量子效率为18.1%,使其效率的性能与基于混合有机无机蒸发的CQW-LED和所有其他最佳解决方案处理的LED相同。此外,该体系结构提供的高最大亮度为19,800 cd/m2,在100 cd/m2时长247小时,以及饱和的深红发射(651 nm)。这些发现表明,CQWS定向自组装的有效性是电动驱动的发射层在改善CQW领导的算法和外部量子效率方面的有效性。

Semiconductor colloidal quantum wells (CQWs) make an exciting quasi-2D class of nanocrystals thanks to their unique properties including their highly anisotropic optical transition dipole moment (TDM). Thus, employing a film of CQWs with face-down orientation as an emissive layer (EML) in an electroluminescent device is expected to substantially boost photon outcoupling efficiency. Here, we show all-solution-processed colloidal quantum well light-emitting diodes (CQW-LEDs) using a single all-face-down oriented self-assembled monolayer (SAM) film of CQWs that enables a high level of in-plane (IP) TDMs of 92%. This SAM film significantly enhances the outcoupling efficiency from 22% (of standard randomly-oriented emitters) to 34% (of face-down oriented emitters) and charge injection efficiency. This SAM-CQW-LED architecture enables a record high level of external quantum efficiency of 18.1% for the solution-processed type of CQW-LEDs, putting their efficiency performance on par with the hybrid organic-inorganic evaporation-based CQW-LEDs and all other best solution-processed LEDs. In addition, this architecture provides a high maximum brightness of 19,800 cd/m2 with a long operational lifetime of 247 h at 100 cd/m2 along with saturated deep-red emission (651 nm). These findings indicate the effectiveness of oriented self-assembly of CQWs as electrically-driven emissive layers in improving outcoupling and external quantum efficiencies in the CQW-LEDs.

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