论文标题
AB-BILAYER石墨烯Josephson连接处的激子隧道
Excitonic Tunneling in the AB-bilayer Graphene Josephson Junctions
论文作者
论文摘要
我们考虑了AB堆放的双层石墨烯约瑟夫森交界处。双层应该处于电荷平衡状态，并且在构造的每个电子层中的半填充和外部栅极的每个值处。通过考虑交界处的两侧相互作用的双层，并考虑到内层和层间库仑相互作用的效果，我们通过交界处计算了正常和激子隧道电流。由于BLGS中的激子配对效应和凝结，已经考虑了电子带重量级化。精确的四波段能量分散剂，包括激子的重量化，已用于双层，而没有任何低能的近似。我们通过在零施加电压和相干冷凝物的不同阶段显示基态的退化性，通过显示通过连接点的DC Josephson电流。已经计算出针对不同的栅极电压以及相互作用参数的不同值的正常和激子隧道电流。详细讨论了电荷中立点的作用。
We have considered the AB-stacked bilayer graphene Josephson junction. The bilayers are supposed to be in the charge equilibrium states and at the half-filling in each of the electronic layers of the construction and at each value of the external gate. By considering the interacting bilayers in both sides of the junction and by taking into account both intralayer and interlayer Coulomb interaction effects, we have calculated the normal and excitonic tunnel currents through the junction. The electronic band renormalizations have been taken into account, due to the excitonic pairing effects and condensation in the BLGs. The exact four-band energy dispersions, including the excitonic renormalizations, have been used for the bilayers without any low-energy approximation. We show the degeneracy of the ground state at the zero applied voltage and for different phases of the coherent condensates by showing a dc Josephson current through the junction. The normal and excitonic tunneling currents have been calculated for different gate voltages and for different values of the interaction parameters. The role of the charge neutrality point has been discussed in details.
