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2D materials with broken inversion symmetry posses an extra degree of freedom, the valley pseudospin, that labels in which of the two energy-degenerate crystal momenta, K or K', the conducting carriers are located. It has been shown that shining circularly-polarized light allows to achieve close to $100\%$ of valley polarization, opening the way to valley-based transistors. Yet, switching of the valley polarization is still a key challenge for the practical implementation of such devices due to the short coherence lifetimes. Recent progress in ultrashort laser technology now allows to produce trains of attosecond pulses with controlled phase and polarization between the pulses. Taking advantage of such technology, we introduce a coherent control protocol to turn on, off and switch the valley polarization at faster timescales than electronic and valley decoherence, that is, an ultrafast optical valley switch. We theoretically demonstrate the protocol for hBN and MoS$_2$ monolayers calculated from first principles. Additionally, using two time-delayed linearly-polarized pulses with perpendicular polarization, we show that we can extract the electronic dephasing time $T_2$ from the valley Hall conductivity.