论文标题
辐射损坏的硅的带隙能量的研究
Study of the band-gap energy of radiation-damaged silicon
论文作者
论文摘要
已经测量了由24 GEV/C质子和反应器中子辐照的硅晶体的传播，该光子能量在0.95至1.3 eV之间测量了光子能量，$Eγ$。从传输数据中，可以计算吸收系数$α$，并根据$α（e_γ）$从带隙能量（$ e_ {gap} $的通量依赖性和横向光学声子的能量，$ e_ {ph} $，确定。发现在大约1 meV的实验不确定性中，$ e_ {gap} $也不是$ e_ {ph} $取决于流动性，最大$ 1 \ times 10^{17} $ cm $ cm $^{ - 2} $。 $ e_ {gap} $的值在大约1 meV中与公认的值同意，如果假定具有15 meV的激子结合能量。针对$ e_ {ph} $找到了类似的协议。为了提取$ e_ {gap} $和$ e_ {ph} $ $ \ sqrt {α（eγ）} $的第二个衍生物使用高斯内核平滑。
The transmission of silicon crystals irradiated by 24 GeV/c protons and reactor neutrons has been measured for photon energies, $Eγ$, between 0.95 and 1.3 eV. From the transmission data the absorption coefficient $α$ is calculated, and from $α(E_γ)$ the fluence dependence of the band-gap energy, $E_{gap}$, and the energy of transverse optical phonons, $E_{ph}$, determined. It is found that within the experimental uncertainties of about 1 meV neither $E_{gap}$ nor $E_{ph}$ depend on fluence up to the maximum fluence of $1 \times 10^{17}$ cm$^{-2}$ of the measurements. The value of $E_{gap}$ agrees within about 1 meV with the generally accepted value, if an exciton-binding energy of 15 meV is assumed. A similar agreement is found for $E_{ph}$. For the extraction of $E_{gap}$ and $E_{ph}$ the second derivative of $\sqrt{α(Eγ )}$ smoothed with a Gaussian kernel has been used.
