论文标题
电信单光子发射器的晶圆尺度纳米制造
Wafer-scale nanofabrication of telecom single-photon emitters in silicon
论文作者
论文摘要
缩放数百万量子位的一条高度有希望的途径是使用量子光子集成电路（图片），在该电路（图片）中，确定性光子源，可重构光学元件和单光子探测器是单一集成在同一硅芯片上的。在光学电信O波段中，单光子发射器的分离，例如G中心和W中心，最近在硅中实现了。但是，在所有以前的情况下，单光子发射器都是在随机位置无法控制的，从而阻止了其可扩展性。在这里，我们报告使用聚焦离子束（FIB）在硅晶片中对单G和W中心的可控制造，概率超过50％。我们还实施了与互补的金属氧化物 - 氧化通导器（CMOS）技术兼容的可扩展的宽光束植入方案，以在纳米级上所需的位置制造单个电信发射器。我们的发现为工业规模的光子量子处理器提供了一条清晰，易于利用的途径，其技术节点低于100 nm。
A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
