论文标题
量子井中的磁离子松弛时间分布
Magnetic ion relaxation time distribution within a quantum well
论文作者
论文摘要
时间分辨的光学检测到的磁共振（ODMR）是研究磁离子周围晶格的局部变形以及离子自旋松弛时间的局部变形。在这里，我们利用选择性的MN掺杂来增强ODMR技术的固有位置。我们介绍了单个{（CD，Mg）TE/（CD，MN）TE}量子井（QWS）的时间分辨ODMR研究，其锰离子位于沿着生长轴的不同位置 - 位于量子孔的中心或侧面。我们观察到，Mn $^{2+} $的自旋晶格松弛显着取决于低磁场处的离子 - 载波波函数重叠。有趣的是，尽管载流子密度非常低，但仍明确观察到了效果，这表明在未来的实验中，通过电场来控制Mn $^{2+} $ ion放松率。
Time-resolved optically detected magnetic resonance (ODMR) is a valuable technique to study the local deformation of the crystal lattice around magnetic ion as well as the ion spin relaxation time. Here we utilize selective Mn-doping to additionally enhance the inherent locality of the ODMR technique. We present the time-resolved ODMR studies of single {(Cd,Mg)Te/(Cd,Mn)Te} quantum wells (QWs) with manganese ions located at different positions along the growth axis -- in the center or on the sides of the quantum well. We observe that spin-lattice relaxation of Mn$^{2+}$ significantly depends on the ion-carrier wavefunction overlap at low-magnetic fields. Interestingly, the effect is clearly observed in spite of very low carrier density, which suggests the potential for control of the Mn$^{2+}$ ion relaxation rate by means of the electric field in future experiments.
