论文标题
晶体障碍对溅射拓扑绝缘子/铁磁异质结构的界面和磁性特性的影响
Effects of Crystalline Disorder on Interfacial and Magnetic Properties of Sputtered Topological Insulator/Ferromagnet Heterostructures
论文作者
论文摘要
拓扑绝缘子（TIS）的薄膜与铁磁体（FMS）是能节能的旋转器设备的出色候选者。在这里，据报道，TI的结构结构障碍对溅射沉积Ti/FM的界面和磁性特性，BI2TE3/NI80FE20，异质结构的影响。发现Ni和较小的PY Fe在界面上扩散并与BI2TE3反应。对于高度结晶的C轴为导向的BI2TE3膜，观察到了吉尔伯特阻尼的巨大增强，并伴有有效的平面外磁各向异性和增强的类似阻尼的自旋轨扭矩（DL-SOT），这可能是由于Bi2Te3的拓扑表面状态（TSS）。此外，在低温下，在磁滞环测量中观察到自发交换偏差。这是因为抗磁性拓扑界面层是由扩散的Ni与BI2TE3的反应形成的，该层与FM伴侣Ni80fe20相结合。对于增加BI2TE3的疾病，发现AFM界面层中的交换相互作用显着弱化。这些实验结果抽象长度是一段。
Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties of sputter-deposited TI/FM, Bi2Te3/Ni80Fe20, heterostructures is reported. Ni and a smaller amount of Fe from Py was found to diffuse across the interface and react with Bi2Te3. For highly crystalline c-axis oriented Bi2Te3 films, a giant enhancement in Gilbert damping is observed, accompanied by an effective out-of-plane magnetic anisotropy and enhanced damping-like spin-orbit torque (DL-SOT), possibly due to the topological surface states (TSS) of Bi2Te3. Furthermore, a spontaneous exchange bias is observed in hysteresis loop measurements at low temperatures. This is because of an antiferromagnetic topological interfacial layer formed by reaction of the diffused Ni with Bi2Te3 which couples with the FM, Ni80Fe20. For increasing disorder of Bi2Te3, a significant weakening of exchange interaction in the AFM interfacial layer is found. These experimental results Abstract length is one paragraph.
