论文标题
带结构驱动的热电响应拓扑半导体ZRTE $ _5 $
Band Structure Driven Thermoelectric Response of Topological Semiconductor ZrTe$_5$
论文作者
论文摘要
我们报告了最近确定的拓扑半导体Zrte $ _5 $的运输,热力学和光谱研究,重点是阐明其带结构与不寻常的热电特性之间的连接。使用时间和角度分辨的光发射光谱(TR-ARPES),我们观察到一个小的电子带隙和依赖温度的费米水平,该水平从单个价值到具有降低温度的传统带,与先前的报告一致。这种低温费米表面与量子振荡得出的紧密匹配,这表明它反映了散装电子结构。 Seebeck和低场NERNST响应的特征是异常大且非单调温度的演化。我们发现,可以使用基于观察到的频带特征和费米水平的线性温度转移的半经典模型来定量解释这一点。此外,我们观察到磁场中两个热电系数的大型,不饱和的增强。我们表明,与量子振荡的LifShitz-Kosevich分析相关的Zeeman Energy可以通过Zeeman Energy进行捕获。这些观察结果共同提供了Zrte $ _ {5} $作为模型高移动性半导体和潜在磁场驱动热电学的潜在平台的全面图片。
We report a transport, thermodynamic, and spectroscopic study of the recently identified topological semiconductor ZrTe$_5$ with a focus on elucidating the connections between its band structure and unusual thermoelectric properties. Using time and angle resolved photoemission spectroscopy (tr-ARPES) we observe a small electronic band gap and temperature dependent Fermi level which traverses from a single valence to conduction band with lowering temperature, consistent with previous reports. This low temperature Fermi surface closely matches that derived from quantum oscillations, suggesting it is reflective of the bulk electronic structure. The Seebeck and low field Nernst response is characterized by an unusually large and non-monotonic temperature evolution. We find this can be quantitatively explained using a semiclassical model based on the observed band character and a linear temperature shifting of the Fermi level. Additionally, we observe a large, non-saturating enhancement of both thermoelectric coefficients in magnetic field. We show this can be captured by the Zeeman energy associated with a large effective $g$-factor of 25.8 consistent with that derived from Lifshitz-Kosevich analysis of the quantum oscillations. Together these observations provide a comprehensive picture of ZrTe$_{5}$ as a model high mobility semiconductor and potential platform for significant magnetic field driven thermoelectricity.