论文标题

在范德华扁平频带化合物中发现单频莫特绝缘子

Discovery of a Single-Band Mott Insulator in a van der Waals Flat-Band Compound

论文作者

Gao, Shunye, Zhang, Shuai, Wang, Cuixiang, Yan, Shaohua, Han, Xin, Ji, Xuecong, Tao, Wei, Liu, Jingtong, Wang, Tiantian, Yuan, Shuaikang, Qu, Gexing, Chen, Ziyan, Zhang, Yongzhao, Huang, Jierui, Pan, Mojun, Peng, Shiyu, Hu, Yong, Li, Hang, Huang, Yaobo, Zhou, Hui, Meng, Sheng, Yang, Liu, Wang, Zhiwei, Yao, Yugui, Chen, Zhiguo, Shi, Ming, Ding, Hong, Yang, Huaixin, Jiang, Kun, Li, Yunliang, Lei, Hechang, Shi, Youguo, Weng, Hongming, Qian, Tian

论文摘要

Mott绝缘子为探索广泛相关的物理现象(例如高温超导性,量子自旋液体和巨大的磁性耐药性)提供了良好的基础。具有最简单自由度的Mott绝缘子是研究Mottness的基本物理学的理想且高度理想的系统。在这项研究中,我们明确地鉴定了范德华分层化合物NB3CL8中的这种预期的Mott绝缘子。在高温阶段(其中层间耦合都可以忽略不计,密度功能理论计算NB3CL8的单层表明在费米水平上有半填充的平坦带,而角度分辨的光发射光谱实验观察了很大的空白。考虑强电子相关性的动态平均场理论计算完美地复制了该观察结果,表明相关驱动的莫特绝缘体状态。由于从单个2A1轨道衍生出的半填充带与所有其他频段分离出来,因此NB3CL8的单层是著名的单波段Hubbard模型的理想实现。在降低温度后,大体系统会经历相变,其中结构变化显着增强了层间耦合。这导致哈伯德频带中的键合 - 抗反向分裂分裂,而莫特的差距仍然占主导地位。我们的发现提供了一个简单而精确的模型系统,用于研究Mott物理和其他新兴相关状态。

The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with the simplest degree of freedom is an ideal and highly desirable system for studying the fundamental physics of Mottness. In this study, we have unambiguously identified such an anticipated Mott insulator in a van der Waals layered compound Nb3Cl8. In the high-temperature phase, where interlayer coupling is negligible, density functional theory calculations for the monolayer of Nb3Cl8 suggest a half-filled flat band at the Fermi level, whereas angle-resolved photoemission spectroscopy experiments observe a large gap. This observation is perfectly reproduced by dynamical mean-field theory calculations considering strong electron correlations, indicating a correlation-driven Mott insulator state. Since this half-filled band derived from a single 2a1 orbital is isolated from all other bands, the monolayer of Nb3Cl8 is an ideal realization of the celebrated single-band Hubbard model. Upon decreasing the temperature, the bulk system undergoes a phase transition, where structural changes significantly enhance the interlayer coupling. This results in a bonding-antibonding splitting in the Hubbard bands, while the Mott gap remains dominant. Our discovery provides a simple and seminal model system for investigating Mott physics and other emerging correlated states.

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